@article{oai:hsuh.repo.nii.ac.jp:00007460,
 author = {川上, 智史 and 荊木, 裕司 and 原口, 克博 and 尾立, 光 and 川村, 周徳 and 久保田, 端尚 and 宮本, 武彦 and 渡辺, 敏彦 and 飯岡, 淳子 and 入戸野, 誠 and 尾立, 達治 and 大沼, 修一 and 関口, 昇 and 横内, 厚雄 and 松田, 浩一},
 issue = {1},
 journal = {東日本歯学雑誌},
 month = {Jun},
 note = {P(論文), Recently, sedative and antiphlogistic treatment is conducted with low energy laser irradiation. The purpose of the this study was to evaluate the effectiveness to decrease of pain just after irradiation by a GaAlAs semiconductor laser. The irradiation apparatus was SEMI LASER NANOX (LX-800 : G-C. Co.) with the following features : a wave lengh of (around) 780nm : the laser energy, 30mW ; exposure time, SOsec to ISOsec/ per treatment. Diagnosis of pre-and post-operative sensitivity were classified into the following four grades : Grade 0 no pain. Grade I mild pain. Grade II strong but tolerable pain. Grade III intolerable pain (simultaneous with stimulation). The results were as follows: 1. In the hypersensitivity of dentin, the treatment was not effective with 2 cases of grade III, but with all of grade I , II (35 cases) the pain decreased just after irradiation. 2 . It was effective in all cases with pain like periodontitis after root canal filling and pain after extraction of teeth. 3 . It was effective in all cases with gingivitis, stomatitis, and gingival ulcers after infilttation anesthesia etc..},
 pages = {57--62},
 title = {<臨床>GaAlAs半導体レーザーの歯科臨床応用},
 volume = {8},
 year = {1989}
}